Datasheet > KDB2670

KDB2670

更新时间： 2024-09-23 12:31:47

品牌	Logo	应用领域
TYSEMI		栅极开关
页数	文件大小	规格书
2页	270K
描述
19 A, 200 V. RDS(ON) = 130 m VGS = 10 V Fast switching speed Low gate charge

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数据手册

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KDB2670 数据手册

SMD Type

Product specification

KDB2670^(FDB2670)

TO-263

Features

Unit: mm

19 A, 200 V. R^DS(ON)= 130 m @ V^GS= 10 V

Low gate charge (27 nC typical)

Fast switching speed

+0.2

4.57

-0.2

+0.1

1.27

-0.1

High performance trench technology for extremely

low R^DS(ON)

+0.1

-0.1

0.1max

1.27

High power and current handling capability

+0.1

0.81

-0.1

2.54

1 Gate

+0.2

2.54

-0.2

2 Drain

3 Source

+0.1

5.08

-0.1

+0.2

0.4

-0.2

Absolute Maximum Ratings Ta = 25

Parameter

Drain to source voltage

Gate to source voltage

Symbol

V^DSS

V^GSS

I^D

Rating

200

Unit

Drain current-Continuous

Drain current-Pulsed

I^DP

Power dissipation

P^D

0.63

3.2

Derate above 25

V/ns

Peak Diode Recovery dv/dt

Thermal Resistance Junction to Ambient

Thermal Resistance, Junction-to-Case

Channel temperature

d^v/d^t

R^èJA

R^èJC

T^ch

62.5

1.6

175

Storage temperature

T^stg

-65 to +175

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