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2SK3511

更新时间: 2024-09-24 12:31:47
品牌 Logo 应用领域
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页数 文件大小 规格书
1页 120K
描述
Super low on-state resistance: RDS(on) = 12.5 m MAX Built-in gate protection diode

2SK3511 数据手册

  
Product specification  
2SK3511  
TO-263  
Unit: mm  
+0.2  
4.57  
-0.2  
+0.1  
1.27  
-0.1  
Features  
Super low on-state resistance:  
RDS(on) = 12.5 m MAX. (VGS = 10 V, ID = 42 A)  
Low Ciss: Ciss = 5900 pF TYP.  
Built-in gate protection diode  
+0.1  
-0.1  
0.1max  
1.27  
+0.1  
0.81  
-0.1  
2.54  
1 Gate  
+0.2  
2.54  
-0.2  
+0.1  
5.08  
-0.1  
+0.2  
0.4  
-0.2  
2 Drain  
3 Source  
Absolute Maximum Ratings Ta = 25  
Parameter  
Drain to source voltage  
Symbol  
VDSS  
VGSS  
ID  
Rating  
75  
Unit  
V
Gate to source voltage  
V
20  
A
83  
Drain current  
Idp *  
A
260  
100  
Power dissipation  
TC=25  
TA=25  
PD  
W
1.5  
Channel temperature  
Storage temperature  
Tch  
150  
Tstg  
-55 to +150  
* PW 10 s,Duty Cycle 1%  
Electrical Characteristics Ta = 25  
Parameter  
Drain cut-off current  
Gate leakage current  
Gate cutoff voltage  
Forward transfer admittance  
Drain to source on-state resistance  
Input capacitance  
Symbol  
IDSS  
IGSS  
VGS(off)  
Yfs  
Testconditons  
Min  
Typ  
Max  
10  
Unit  
A
VDS=75V,VGS=0  
VGS= 20V,VDS=0  
VDS=10V,ID=1mA  
VDS=10V,ID=42A  
VGS=10V,ID=42A  
10  
A
2.0  
21  
3.0  
45  
4.0  
V
S
RDS(on)  
Ciss  
Coss  
Crss  
ton  
9.5  
5900  
810  
400  
30  
12.5  
m
pF  
pF  
pF  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
VDS=10V,VGS=0,f=1MHZ  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
tr  
21  
ID=42A,VGS(on)=10V,RL=10 ,VDD=38V  
Turn-off delay time  
Fall time  
toff  
72  
tf  
12  
Total Gate Charge  
QG  
100  
24  
ID =83A, VDD =60V, VGS = 10 V  
Gate to Source Charge  
Gate to Drain Charge  
QGS  
QGD  
35  
http://www.twtysemi.com  
sales@twtysemi.com  
1 of 1  
4008-318-123  

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