Datasheet > PMV185XN,215

PMV185XN,215

更新时间： 2024-02-26 05:08:46

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
14页	206K
描述
PMV185XN - 30 V, single N-channel Trench MOSFET TO-236 3-Pin

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技术参数
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PMV185XN,215 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
零件包装代码：	TO-236	针数：	3
Reach Compliance Code：	unknown	风险等级：	5.73
Base Number Matches：	1

PMV185XN,215 数据手册

PMV185XN

30 V, single N-channel Trench MOSFET

3 August 2012

Product data sheet

1. Product profile

1.1 General description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23

(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

technology.

1.2 Features and benefits

Low R_DSon

•

Very fast switching

Trench MOSFET technology

1.3 Applications

Relay driver

•

High-speed line driver

Low-side loadswitch

Switching circuits

1.4 Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

V_DS

V_GS

I_D

drain-source voltage

gate-source voltage

drain current

T_amb= 25 °C

-12

V_GS= 4.5 V; T_amb= 25 °C; t ≤ 5 s

V_GS= 4.5 V; I_D= 1.1 A; T_j= 25 °C

[1]

1.2

Static characteristics

R_DSondrain-source on-state

resistance

185

250

mΩ

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for

drain 6 cm².

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