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PMEM4020AND PDF预览

PMEM4020AND

更新时间: 2024-10-27 06:04:23
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管
页数 文件大小 规格书
13页 80K
描述
NPN transistor/Schottky rectifier module

PMEM4020AND 数据手册

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PMEM4020AND  
NPN transistor/Schottky rectifier module  
Rev. 02 — 31 August 2009  
Product data sheet  
1. Product profile  
1.1 General description  
Combination of an NPN transistor with low VCEsat and high current capability and a planar  
Schottky barrier rectifier with an integrated guard ring for stress protection in a SOT457  
(SC-74) small plastic package. PNP complement: PMEM4020APD  
1.2 Features  
I 600 mW total power dissipation  
I High current capability up to 2 A  
I Reduces printed-circuit board area required  
I Reduces pick and place costs  
I Small plastic SMD package  
I Transistor  
N Low collector-emitter saturation voltage  
I Diode  
N Ultra high-speed switching  
N Very low forward voltage  
N Guard ring protected  
1.3 Applications  
I DC-to-DC converters  
I Inductive load drivers  
I General purpose load drivers  
I Reverse polarity protection circuits  
I MOSFET drivers  
1.4 Quick reference data  
Table 1.  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
NPN transistor  
VCEO collector-emitter voltage  
IC collector current (DC)  
open base  
-
-
-
-
40  
2
V
A
[1]  
continuous;  
Ts 55 °C  

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