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PMEM4020APD PDF预览

PMEM4020APD

更新时间: 2024-10-27 10:07:31
品牌 Logo 应用领域
恩智浦 - NXP 晶体小信号双极晶体管开关光电二极管
页数 文件大小 规格书
13页 80K
描述
PNP transistor/Schottky rectifier module

PMEM4020APD 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SC-74包装说明:SMALL OUTLINE, R-PDSO-G6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.82
Is Samacsys:N最大集电极电流 (IC):0.75 A
集电极-发射极最大电压:40 V配置:SINGLE WITH BUILT-IN DIODE
最小直流电流增益 (hFE):160JESD-30 代码:R-PDSO-G6
JESD-609代码:e3元件数量:1
端子数量:6最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
最大功率耗散 (Abs):1 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz
Base Number Matches:1

PMEM4020APD 数据手册

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PMEM4020APD  
PNP transistor/Schottky rectifier module  
Rev. 02 — 31 August 2009  
Product data sheet  
1. Product profile  
1.1 General description  
Combination of a PNP transistor with low VCEsat and high current capability and a planar  
Schottky barrier rectifier with an integrated guard ring for stress protection in a SOT457  
(SC-74) small plastic package. NPN complement: PMEM4020AND  
1.2 Features  
I 600 mW total power dissipation  
I High current capability up to 2 A  
I Reduces printed-circuit board area required  
I Reduces pick and place costs  
I Small plastic SMD package  
I Transistor  
N Low collector-emitter saturation voltage  
I Diode  
N Ultra high-speed switching  
N Very low forward voltage  
N Guard ring protected  
1.3 Applications  
I DC-to-DC converters  
I Inductive load drivers  
I General purpose load drivers  
I Reverse polarity protection circuits  
I MOSFET drivers  
1.4 Quick reference data  
Table 1.  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
PNP transistor  
VCEO collector-emitter voltage  
IC collector current (DC)  
open base  
-
-
-
-
40  
2  
V
A
[1]  
continuous;  
Ts 55 °C  

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