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PMEM4020APD,125 PDF预览

PMEM4020APD,125

更新时间: 2024-10-28 10:25:27
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
13页 76K
描述
1300mA, 40V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, SC-74, SOT-457, 6 PIN

PMEM4020APD,125 数据手册

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PMEM4020APD  
PNP transistor/Schottky rectifier module  
Rev. 01 — 4 October 2004  
Product data sheet  
1. Product profile  
1.1 General description  
Combination of a PNP transistor with low VCEsat and high current capability and a planar  
Schottky barrier rectifier with an integrated guard ring for stress protection in a SOT457  
(SC-74) small plastic package. NPN complement: PMEM4020AND.  
1.2 Features  
600 mW total power dissipation  
High current capability up to 2 A  
Reduces printed-circuit board area required  
Reduces pick and place costs  
Small plastic SMD package  
Transistor  
Low collector-emitter saturation voltage.  
Diode  
Ultra high-speed switching  
Very low forward voltage  
Guard ring protected.  
1.3 Applications  
DC-to-DC converters  
Inductive load drivers  
General purpose load drivers  
Reverse polarity protection circuits  
MOSFET drivers.  
1.4 Quick reference data  
Table 1:  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
PNP transistor  
VCEO collector-emitter voltage  
IC collector current (DC)  
open base  
-
-
-
-
40  
2  
V
A
[1]  
continuous;  
Ts 55 °C  

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