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PMEM4020APD-115 PDF预览

PMEM4020APD-115

更新时间: 2024-10-27 15:48:11
品牌 Logo 应用领域
恩智浦 - NXP 开关光电二极管晶体管
页数 文件大小 规格书
13页 76K
描述
TRANSISTOR 1300 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, SC-74, SOT-457, 6 PIN, BIP General Purpose Small Signal

PMEM4020APD-115 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TSOP包装说明:SMALL OUTLINE, R-PDSO-G6
针数:6Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.84
最大集电极电流 (IC):1.3 A集电极-发射极最大电压:40 V
配置:SINGLE WITH BUILT-IN DIODE最小直流电流增益 (hFE):50
JESD-30 代码:R-PDSO-G6JESD-609代码:e3
元件数量:1端子数量:6
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
最大功率耗散 (Abs):0.6 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz
Base Number Matches:1

PMEM4020APD-115 数据手册

 浏览型号PMEM4020APD-115的Datasheet PDF文件第2页浏览型号PMEM4020APD-115的Datasheet PDF文件第3页浏览型号PMEM4020APD-115的Datasheet PDF文件第4页浏览型号PMEM4020APD-115的Datasheet PDF文件第5页浏览型号PMEM4020APD-115的Datasheet PDF文件第6页浏览型号PMEM4020APD-115的Datasheet PDF文件第7页 
PMEM4020APD  
PNP transistor/Schottky rectifier module  
Rev. 01 — 4 October 2004  
Product data sheet  
1. Product profile  
1.1 General description  
Combination of a PNP transistor with low VCEsat and high current capability and a planar  
Schottky barrier rectifier with an integrated guard ring for stress protection in a SOT457  
(SC-74) small plastic package. NPN complement: PMEM4020AND.  
1.2 Features  
600 mW total power dissipation  
High current capability up to 2 A  
Reduces printed-circuit board area required  
Reduces pick and place costs  
Small plastic SMD package  
Transistor  
Low collector-emitter saturation voltage.  
Diode  
Ultra high-speed switching  
Very low forward voltage  
Guard ring protected.  
1.3 Applications  
DC-to-DC converters  
Inductive load drivers  
General purpose load drivers  
Reverse polarity protection circuits  
MOSFET drivers.  
1.4 Quick reference data  
Table 1:  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
PNP transistor  
VCEO collector-emitter voltage  
IC collector current (DC)  
open base  
-
-
-
-
40  
2  
V
A
[1]  
continuous;  
Ts 55 °C  

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