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PMEM4030NS,115 PDF预览

PMEM4030NS,115

更新时间: 2024-10-27 21:10:55
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
14页 116K
描述
PMEM4030NS

PMEM4030NS,115 技术参数

生命周期:ObsoleteReach Compliance Code:compliant
风险等级:5.59Base Number Matches:1

PMEM4030NS,115 数据手册

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PMEM4030NS  
NPN transistor/Schottky rectifier module  
Rev. 02 — 8 July 2005  
Product data sheet  
1. Product profile  
1.1 General description  
Combination of a NPN transistor with low VCEsat and high current capability and a planar  
Schottky barrier rectifier with an integrated guard ring for stress protection in a SOT96-1  
(SO8/MS-012) small plastic package. PNP complement: PMEM4030PS.  
1.2 Features  
1 W total power dissipation  
High current capability up to 2 A  
Reduces Printed-Circuit Board (PCB) area required  
Reduces pick and place costs  
Small plastic Surface Mounted Device (SMD) package  
Transistor  
Low collector-emitter saturation voltage  
Diode  
High-speed switching  
Low forward voltage  
Guard ring protected  
1.3 Applications  
DC-to-DC converters  
Inductive load drivers  
General-purpose load drivers  
1.4 Quick reference data  
Table 1:  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
NPN transistor  
VCEO collector-emitter voltage  
IC collector current (DC)  
Schottky barrier rectifier  
open base  
continuous  
-
-
-
-
50  
2
V
A
VR  
IF  
reverse voltage  
forward current  
-
-
-
-
40  
1
V
A
 
 
 
 
 

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