Datasheet > PMEM4020APD-125

PMEM4020APD-125

更新时间： 2024-10-28 06:55:39

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
13页	76K
描述
TRANSISTOR 1300 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, SC-74, SOT-457, 6 PIN, BIP General Purpose Small Signal

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PMEM4020APD-125 数据手册

PMEM4020APD

PNP transistor/Schottky rectiﬁer module

Rev. 01 — 4 October 2004

Product data sheet

1. Product proﬁle

1.1 General description

Combination of a PNP transistor with low V_CEsatand high current capability and a planar

Schottky barrier rectiﬁer with an integrated guard ring for stress protection in a SOT457

(SC-74) small plastic package. NPN complement: PMEM4020AND.

1.2 Features

■ 600 mW total power dissipation

■ High current capability up to 2 A

■ Reduces printed-circuit board area required

■ Reduces pick and place costs

■ Small plastic SMD package

■ Transistor

◆ Low collector-emitter saturation voltage.

■ Diode

◆ Ultra high-speed switching

◆ Very low forward voltage

◆ Guard ring protected.

1.3 Applications

■ DC-to-DC converters

■ Inductive load drivers

■ General purpose load drivers

■ Reverse polarity protection circuits

■ MOSFET drivers.

1.4 Quick reference data

Table 1:

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

PNP transistor

V_CEOcollector-emitter voltage

I_Ccollector current (DC)

open base

−40

−2

[1]

continuous;

T_s≤ 55 °C

12 3 4 5 6 7...13

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