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PMEM4020AND,115 PDF预览

PMEM4020AND,115

更新时间: 2024-10-28 15:48:11
品牌 Logo 应用领域
恩智浦 - NXP 开关光电二极管晶体管
页数 文件大小 规格书
13页 81K
描述
TRANSISTOR 950 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-74, 6 PIN, BIP General Purpose Small Signal

PMEM4020AND,115 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SC-74包装说明:PLASTIC, SC-74, 6 PIN
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.82
最大集电极电流 (IC):0.95 A集电极-发射极最大电压:40 V
配置:SINGLE WITH BUILT-IN DIODE最小直流电流增益 (hFE):200
JESD-30 代码:R-PDSO-G6JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:6封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):0.6 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):150 MHzBase Number Matches:1

PMEM4020AND,115 数据手册

 浏览型号PMEM4020AND,115的Datasheet PDF文件第2页浏览型号PMEM4020AND,115的Datasheet PDF文件第3页浏览型号PMEM4020AND,115的Datasheet PDF文件第4页浏览型号PMEM4020AND,115的Datasheet PDF文件第5页浏览型号PMEM4020AND,115的Datasheet PDF文件第6页浏览型号PMEM4020AND,115的Datasheet PDF文件第7页 
PMEM4020AND  
NPN transistor/Schottky rectifier module  
Rev. 02 — 31 August 2009  
Product data sheet  
1. Product profile  
1.1 General description  
Combination of an NPN transistor with low VCEsat and high current capability and a planar  
Schottky barrier rectifier with an integrated guard ring for stress protection in a SOT457  
(SC-74) small plastic package. PNP complement: PMEM4020APD  
1.2 Features  
I 600 mW total power dissipation  
I High current capability up to 2 A  
I Reduces printed-circuit board area required  
I Reduces pick and place costs  
I Small plastic SMD package  
I Transistor  
N Low collector-emitter saturation voltage  
I Diode  
N Ultra high-speed switching  
N Very low forward voltage  
N Guard ring protected  
1.3 Applications  
I DC-to-DC converters  
I Inductive load drivers  
I General purpose load drivers  
I Reverse polarity protection circuits  
I MOSFET drivers  
1.4 Quick reference data  
Table 1.  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
NPN transistor  
VCEO collector-emitter voltage  
IC collector current (DC)  
open base  
-
-
-
-
40  
2
V
A
[1]  
continuous;  
Ts 55 °C  
 
 
 
 
 

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