Datasheet > PMBT3906YS-Q

PMBT3906YS-Q

更新时间： 2024-09-10 17:02:03

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
10页	238K
描述
40 V, 200 mA PNP/PNP general-purpose double transistorProduction

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PMBT3906YS-Q 数据手册

PMBT3906YS-Q

40 V, 200 mA PNP/PNP general-purpose double transistor

15 January 2024

Product data sheet

1. General description

PNP/PNP general-purpose double transistor in a SOT363 (SC-88) a very small Surface-Mounted

Device (SMD) plastic package.

NPN/NPN complement: PMBT3904YS-Q

NPN/PNP complement: PMBT3946YPN-Q

2. Features and benefits

•

General-purpose double transistor

•

Board-space reduction

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

General-purpose switching and amplification

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

V_CEO

collector-emitter

voltage

open base

-40

I_C

collector current

DC current gain

-200

300

h_FE

V_CE= -1 V; I_C= -10 mA; T_amb= 25 °C

100

180

5. Pinning information

Table 2. Pinning information

Symbol

Description

emitter TR1

base TR1

Simplified outline

Graphic symbol

C1 B2

TR2

collector TR2

emitter TR2

base TR2

TR1

B1 C2

TSSOP6 (SOT363)

sym018

collector TR1

12 3 4 5 6 7...10

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