Datasheet > PMBT4401YS

PMBT4401YS

更新时间： 2024-09-10 11:12:11

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
15页	694K
描述
40 V, 600 mA, double NPN switching transistorProduction

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PMBT4401YS 数据手册

PMBT4401YS

40 V, 600 mA, double NPN switching transistor

2 July 2015

Product data sheet

1. General description

Double NPN switching transistor in a very small SOT363 (TSSOP6) Surface-Mounted

Device (SMD) plastic package.

Double PNP complement: PMBT4403YS

2. Features and benefits

Double general-purpose switching transistor

High current (max. 600 mA)

Voltage max. 40 V

•

AEC-Q101 qualified

3. Applications

Switching and linear amplification

•

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

V_CEO

collector-emitter

voltage

open base

I_C

collector current

600

Per transistor

h_FE

DC current gain

V_CE= 1 V; I_C= 150 mA; t_p≤ 300 µs;

δ ≤ 0.02; T_amb= 25 °C

100

300

V_CE= 2 V; I_C= 500 mA; t_p≤ 300 µs;

δ ≤ 0.02; T_amb= 25 °C

12 3 4 5 6 7...15

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