Datasheet > PMBT3946YPN-Q

PMBT3946YPN-Q

更新时间： 2024-09-10 17:01:47

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
13页	277K
描述
40 V, 200 mA NPN/PNP general-purpose double transistorProduction

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PMBT3946YPN-Q 数据手册

PMBT3946YPN-Q

40 V, 200 mA NPN/PNP general-purpose double transistor

23 November 2023

Product data sheet

1. General description

NPN/PNP general-purpose double transistor in a SOT363 (SC-88) very small Surface-Mounted

Device (SMD) plastic package.

NPN/NPN complement: PMBT3904YS-Q

PNP/PNP complement: PMBT3906YS-Q

2. Features and benefits

•

General-purpose double transistor

•

Board-space reduction

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

General-purpose switching and amplification

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor; for the PNP transistor with negative polarity

V_CEO

collector-emitter

voltage

open base

I_C

collector current

200

TR1 (NPN)

h_FE

DC current gain

V_CE= 1 V; I_C= 10 mA; T_amb= 25 °C

100

180

300

12 3 4 5 6 7...13

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