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PMBT3946YPN PDF预览

PMBT3946YPN

更新时间: 2024-11-05 06:04:23
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管
页数 文件大小 规格书
15页 114K
描述
40 V, 200 mA NPN/PNP general-purpose double transistor

PMBT3946YPN 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SC-88
包装说明:PLASTIC, SC-88, 6 PIN针数:6
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.71最大集电极电流 (IC):0.2 A
集电极-发射极最大电压:40 V配置:SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE):30JESD-30 代码:R-PDSO-G6
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:6
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN AND PNP
认证状态:Not Qualified表面贴装:YES
端子面层:PURE TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):300 MHz最大关闭时间(toff):250 ns
最大开启时间(吨):70 nsBase Number Matches:1

PMBT3946YPN 数据手册

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PMBT3946YPN  
40 V, 200 mA NPN/PNP general-purpose double transistor  
Rev. 01 — 12 May 2009  
Product data sheet  
1. Product profile  
1.1 General description  
NPN/PNP general-purpose double transistor in a SOT363 (SC-88) very small  
Surface-Mounted Device (SMD) plastic package.  
Table 1.  
Product overview  
Type number  
Package  
NXP  
NPN/NPN  
complement  
PNP/PNP  
complement  
Package  
configuration  
JEITA  
PMBT3946YPN SOT363  
SC-88  
PMBT3904YS PMBT3906YS very small  
1.2 Features  
I General-purpose double transistor  
I Board-space reduction  
1.3 Applications  
I General-purpose switching and amplification  
1.4 Quick reference data  
Table 2.  
Symbol Parameter  
Per transistor; for the PNP transistor with negative polarity  
Quick reference data  
Conditions  
Min  
Typ  
Max  
Unit  
VCEO  
IC  
collector-emitter voltage  
collector current  
open base  
-
-
40  
V
-
-
200  
300  
mA  
hFE  
DC current gain  
VCE = 1 V;  
IC = 10 mA  
100  
180  

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