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PMBT3906/T3 PDF预览

PMBT3906/T3

更新时间: 2024-01-11 04:08:31
品牌 Logo 应用领域
恩智浦 - NXP 开关光电二极管晶体管
页数 文件大小 规格书
11页 118K
描述
200mA, 40V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3

PMBT3906/T3 技术参数

是否Rohs认证:符合生命周期:Transferred
零件包装代码:SOT-23包装说明:PLASTIC PACKAGE-3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.12Is Samacsys:N
最大集电极电流 (IC):0.2 A基于收集器的最大容量:4.5 pF
集电极-发射极最大电压:40 V配置:SINGLE
最小直流电流增益 (hFE):30JEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子面层:TIN
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):250 MHz
最大关闭时间(toff):300 ns最大开启时间(吨):70 ns
VCEsat-Max:0.65 VBase Number Matches:1

PMBT3906/T3 数据手册

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PMBT3906  
PNP switching transistor  
Rev. 06 — 2 March 2010  
Product data sheet  
1. Product profile  
1.1 General description  
PNP switching transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD)  
plastic package.  
NPN complement: PMBT3904.  
1.2 Features and benefits  
„ Collector-emitter voltage VCEO = 40 V  
„ Collector current capability IC = 200 mA  
1.3 Applications  
„ General amplification and switching  
1.4 Quick reference data  
Table 1.  
Symbol  
VCEO  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
40  
Unit  
V
collector-emitter voltage open base  
collector current  
-
-
-
-
IC  
200  
mA  
2. Pinning information  
Table 2.  
Pinning  
Description  
Pin  
1
Simplified outline  
Graphic symbol  
base  
3
3
2
emitter  
collector  
3
1
1
2
2
006aab259  

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