Datasheet > PMBT3906VS

PMBT3906VS

更新时间： 2024-11-06 11:12:47

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
10页	224K
描述
40 V, 200 mA PNP/PNP switching transistorProduction

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中文翻译

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技术参数
数据手册

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PMBT3906VS 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.65	Is Samacsys：	N
JESD-609代码：	e3	湿度敏感等级：	1
端子面层：	Tin (Sn)	Base Number Matches：	1

PMBT3906VS 数据手册

PMBT3906VS

40 V, 200 mA PNP/PNP switching transistor

28 December 2022

Product data sheet

1. General description

PNP/PNP double switching transistor in a SOT666 ultra small and flat lead Surface-Mounted

Device (SMD) plastic package.

NPN/NPN complement: PMBT3904VS

NPN/PNP complement: PMBT3946VPN

2. Features and benefits

•

Double general-purpose switching transistor

•

Board-space reduction

Ultra small and flat lead SMD plastic package

3. Applications

•

General-purpose switching and amplification

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

V_CEO

collector-emitter

voltage

open base

-40

I_C

collector current

DC current gain

-200

300

h_FE

V_CE= -1 V; I_C= -10 mA; T_amb= 25 °C

100

180

5. Pinning information

Table 2. Pinning information

Symbol

Description

emitter TR1

base TR1

Simplified outline

Graphic symbol

C1 B2

TR2

collector TR2

emitter TR2

base TR2

TR1

B2 C2

sym018

SOT666

collector TR1

12 3 4 5 6 7...10

中文翻译

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