是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | CHIP CARRIER, R-PBCC-N3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.64 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 0.2 A |
集电极-发射极最大电压: | 40 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 60 | JESD-30 代码: | R-PBCC-N3 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | CHIP CARRIER | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | PNP | 参考标准: | AEC-Q101; IEC-60134 |
表面贴装: | YES | 端子面层: | Tin (Sn) |
端子形式: | NO LEAD | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 250 MHz |
最大关闭时间(toff): | 300 ns | 最大开启时间(吨): | 70 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PMBT3906-Q | NEXPERIA |
获取价格 |
PNP switching transistorProduction |
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PMBT3906-T | NXP |
获取价格 |
200mA, 40V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3 |
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PMBT3906T/R | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 200MA I(C) | SOT-23 |
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PMBT3906-TAPE-7 | NXP |
获取价格 |
200mA, 40V, PNP, Si, SMALL SIGNAL TRANSISTOR |
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PMBT3906TRL | NXP |
获取价格 |
200mA, 40V, PNP, Si, SMALL SIGNAL TRANSISTOR |
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PMBT3906VS | NXP |
获取价格 |
40 V, 200 mA PNP/PNP switching transistor |
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PMBT3906VS | NEXPERIA |
获取价格 |
40 V, 200 mA PNP/PNP switching transistorProduction |
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PMBT3906VS,115 | NXP |
获取价格 |
PMBT3906VS - 40 V, 200 mA PNP/PNP switching transistor SOT 6-Pin |
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PMBT3906YS | NXP |
获取价格 |
40 V, 200 mA PNP/PNP general-purpose double transistor |
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PMBT3906YS | NEXPERIA |
获取价格 |
40 V, 200 mA PNP/PNP matched double transistorsProduction |
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