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PMBFJ309,215 PDF预览

PMBFJ309,215

更新时间: 2024-11-26 15:48:07
品牌 Logo 应用领域
恩智浦 - NXP 放大器光电二极管晶体管
页数 文件大小 规格书
15页 134K
描述
N-channel silicon FET TO-236 3-Pin

PMBFJ309,215 技术参数

是否Rohs认证: 符合生命周期:Not Recommended
零件包装代码:TO-236包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
HTS代码:8541.21.00.75风险等级:6.97
其他特性:LOW NOISE配置:SINGLE
最小漏源击穿电压:25 VFET 技术:JUNCTION
最大反馈电容 (Crss):2.5 pF最高频带:VERY HIGH FREQUENCY BAND
JEDEC-95代码:TO-236ABJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:DEPLETION MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):0.25 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

PMBFJ309,215 数据手册

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PMBFJ308; PMBFJ309;  
PMBFJ310  
T23  
SO  
N-channel silicon field-effect transistors  
Rev. 4 — 20 September 2011  
Product data sheet  
1. Product profile  
1.1 General description  
Symmetrical N-channel silicon junction field-effect transistors in a SOT23 package.  
CAUTION  
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken  
during transport and handling.  
1.2 Features and benefits  
Low noise  
Interchangeability of drain and source connections  
High gain.  
1.3 Applications  
AM input stage in car radios  
VHF amplifiers  
Oscillators and mixers.  
1.4 Quick reference data  
Table 1.  
Quick reference data  
Symbol Parameter  
Conditions  
Min Typ Max Unit  
VDS  
drain-source voltage  
-
-
25  
V
VGSoff  
gate-source cut-off voltage  
PMBFJ308  
VDS = 10 V; ID = 1 A  
VDS = 10 V; ID = 1 A  
VDS = 10 V; ID = 1 A  
1  
1  
2  
-
-
-
6.5 V  
4  
6.5 V  
PMBFJ309  
V
PMBFJ310  
 
 
 
 
 

PMBFJ309,215 替代型号

型号 品牌 替代类型 描述 数据表
PMBFJ310,215 NXP

完全替代

N-channel silicon FET TO-236 3-Pin
PMBFJ308,215 NXP

完全替代

N-channel silicon FET TO-236 3-Pin
PMBFJ308 NXP

完全替代

N-channel silicon field-effect transistors

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