Datasheet > PJQ2888

PJQ2888

更新时间： 2024-10-29 01:25:11

品牌	Logo	应用领域
强茂 - PANJIT		电视
页数	文件大小	规格书
7页	498K
描述
20V P-Channel Enhancement Mode MOSFET with TVS Diode

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PJQ2888 数据手册

PPJQ2888

20V P-Channel Enhancement Mode MOSFET with TVS Diode

DFN2020-8L

-20 V

-1.5A

Voltage

Current

Features

 RDS(ON) , VGS@-4.5V, ID@-1.5A<325mΩ

 RDS(ON) , VGS@-2.5V, ID@-1.2A<420mΩ

 RDS(ON) , VGS@-2.5V, ID@-0.5A<600mΩ

 Advanced Trench Process Technology

 Specially Designed for Switch Load, PWM Application, etc.

 ESD Protected 2KV HBM

 Lead free in compliance with EU RoHS 2011/65/EU directive.

 Green molding compound as per IEC61249 Std.

(Halogen Free)

Mechanical Data

 Case : DFN2020-8L Package

 Terminals : Solderable per MIL-STD-750, Method 2026

 Approx. Weight : 0.00032 ounces, 0.0093 grams

 Marking : 888

Maximum Ratings and Thermal Characteristics (T_A=25^oC unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNITS

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

I_D

-20

Continuous Drain Current

-1.5

(Note 4)

Pulsed Drain Current

I_DM

-6.0

T_a=25^oC

Derate above 25^oC

1.25

Power Dissipation

P_D

mW/ ^oC

^oC

Operating Junction and Storage Temperature Range

Typical Thermal resistance

T_J,T_STG

-55~150

Junction to Ambient ^{(Note 3)}

^oC/W

R_θJA

100

November 16,2015-REV.03

Page 1

12 3 4 5 6 7

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