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PJQ4402P PDF预览

PJQ4402P

更新时间: 2024-10-29 14:53:31
品牌 Logo 应用领域
强茂 - PANJIT /
页数 文件大小 规格书
7页 743K
描述
DFN3333-8L

PJQ4402P 数据手册

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Prelim  
PJQ4402P  
30V N-Channel Enhancement Mode MOSFET  
DFN3333-8L  
30 V  
70 A  
Voltage  
Current  
Features  
RDS(ON), VGS@10V, ID@10A<3.8mΩ  
RDS(ON), VGS@4.5V, ID@5A<5.5mΩ  
High switching speed  
Improved dv/dt capability  
Low gate charge  
Low reverse transfer capacitance  
Lead free in compliance with EU RoHS 2.0  
Green molding compound as per IEC 61249 standard  
Mechanical Data  
Case : DFN3333-8L Package  
Terminals : Solderable per MIL-STD-750, Method 2026  
Approx. Weight : 0.03 grams  
Maximum Ratings and Thermal Characteristics (TA=25oC unless otherwise noted)  
PARAMETER  
Drain-Source Voltage  
SYMBOL  
LIMIT  
UNITS  
VDS  
VGS  
30  
+20  
70  
V
Gate-Source Voltage  
Continuous Drain Current  
Pulsed Drain Current(Note 1)  
Power Dissipation  
TC=25oC  
TC=100oC  
TC=25oC  
TC=25oC  
TC=100oC  
TA=25oC  
TA=70oC  
TA=25oC  
TA=70oC  
ID  
44  
A
IDM  
PD  
280  
39  
W
A
15.6  
16  
Continuous Drain Current  
ID  
13  
Power Dissipation  
Power Dissipation  
2.0  
PD  
W
1.3  
Operating Junction and Storage Temperature Range  
Junction to Case  
TJ,TSTG  
RθJC  
-55~150  
3.21  
oC  
Typical Thermal Resistance(Note 4,5)  
oC/W  
Junction to  
Ambient  
RθJA  
62.5  
Limited only By Maximum Junction Temperature  
February 18,2023  
PJQ4402P-REV.03  
Page 1  

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