Datasheet > PJQ4441P-AU

PJQ4441P-AU

更新时间： 2024-10-29 14:55:43

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
6页	860K
描述
DFN3333-8L

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PJQ4441P-AU 数据手册

PJQ4441P-AU

40V P-Channel Enhancement Mode MOSFET

DFN3333-8L

-40 V

-44 A

Voltage

Current

Features

 R_DS(ON), V_GS@-10V, I_D@-10A<17mΩ

 R_DS(ON), V_GS@-4.5V, I_D@-8A<25mΩ

 Advanced Trench Process Technology

 High density cell design for ultralow on-resistance

 AEC-Q101 qualified

 Lead free in compliance with EU RoHS 2.0

 Green molding compound as per IEC 61249 standard

Mechanical Data

 Case : DFN3333-8L Package

 Terminals : Solderable per MIL-STD-750, Method 2026

 Approx. Weight : 0.03 grams

Maximum Ratings and Thermal Characteristics (T_A=25^oC unless otherwise noted)

PARAMETER

Drain-Source Voltage

SYMBOL

LIMIT

UNITS

V_DS

V_GS

-40

+20

-44

Gate-Source Voltage

T_C=25^oC

T_C=100^oC

T_C=25^oC

T_C=100^oC

T_A=25^oC

T_A=70^oC

T_A=25^oC

T_A=70^oC

Continuous Drain Current^{(Note 4)}

Pulsed Drain Current^{(Note 1)}

Power Dissipation

I_D

-28

I_DM

-135

59.5

-8.5

-7

Continuous Drain Current^{(Note 4)}

Power Dissipation

I_D

^oC

1.3

Operating Junction and Storage Temperature Range

T_J,T_STG

R_θJC

-55~150

2.1

Junction to Case

Typical Thermal Resistance^{(Note 4,5)}

^oC/W

Junction to Ambient

R_θJA

62.5

 Limited only By Maximum Junction Temperature

February 18,2023

PJQ4441P-AU-REV.02

Page 1

12 3 4 5 6

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