Datasheet > PJQ4408P-AU

PJQ4408P-AU

更新时间： 2023-12-06 20:08:18

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
7页	488K
描述
DFN3333-8L

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PJQ4408P-AU 数据手册

PJQ4408P-AU

30V N-Channel Enhancement Mode MOSFET

DFN3333-8L

30 V

42 A

Voltage

Current

Features

 R_DS(ON), V_GS@10V, I_D@16A<9mΩ

 R_DS(ON), V_GS@4.5V, I_D@8A<13mΩ

 High switching speed

 Improved dv/dt capability

 Low gate charge

 Low reverse transfer capacitance

 AEC-Q101 qualified

 Lead free in compliance with EU RoHS 2.0

 Green molding compound as per IEC 61249 Standard

Mechanical Data

 Case : DFN3333-8L Package

 Terminals : Solderable per MIL-STD-750, Method 2026

 Approx. Weight : 0.03 grams

Maximum Ratings and Thermal Characteristics (T_A=25^oC unless otherwise noted)

PARAMETER

Drain-Source Voltage

SYMBOL

LIMIT

UNITS

V_DS

V_GS

+20

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current^{(Note 1)}

Power Dissipation

T_C=25^oC

T_C=100^oC

T_C=25^oC

T_C=100^oC

T_A=25^oC

T_A=70^oC

T_A=25^oC

T_A=70^oC

I_D

I_DM

168

Continuous Drain Current

I_D

Power Dissipation

2.0

^oC

1.3

Operating Junction and Storage Temperature Range

T_J,T_STG

R_θJC

-55~150

3.6

Junction to Case

Typical Thermal Resistance^{(Note 4,5)}

^oC/W

Junction to Ambient

R_θJA

62.5

 Limited only By Maximum Junction Temperature

February 18,2023

PJQ4408P-AU-REV.04

Page 1

12 3 4 5 6 7

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