Datasheet > PJQ4442P-AU

PJQ4442P-AU

更新时间： 2024-10-29 14:55:43

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
6页	544K
描述
DFN3333-8L

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PJQ4442P-AU 数据手册

PJQ4442P-AU

40V N-Channel Enhancement Mode MOSFET

DFN3333-8L

Voltage

Current

40 V

50 A

Features

 R_DS(ON), V_GS@10V, I_D@20A<7.5mΩ

 R_DS(ON), V_GS@4.5V, I_D@10A<10.5mΩ

 Advanced Trench Process Technology

 High density cell design for ultralow on-resistance

 AEC-Q101 qualified

 Lead free in compliance with EU RoHS 2.0

 Green molding compound as per IEC 61249 standard

Mechanical Data

 Case : DFN3333-8L Package

 Terminals : Solderable per MIL-STD-750, Method 2026

 Approx. Weight : 0.03 grams

Maximum Ratings and Thermal Characteristics (T_A=25^oC unless otherwise noted)

PARAMETER

Drain-Source Voltage

SYMBOL

LIMIT

UNITS

V_DS

V_GS

+20

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current^{(Note 1)}

Power Dissipation

T_C=25^oC

T_C=100^oC

T_C=25^oC

T_C=100^oC

T_A=25^oC

T_A=70^oC

T_A=25^oC

T_A=70^oC

I_D

I_DM

200

53.6

26.8

12.7

Continuous Drain Current

I_D

Power Dissipation

2.4

^oC

1.6

Operating Junction and Storage Temperature Range

T_J,T_STG

R_θJC

-55~175

2.8

Junction to Case

Typical Thermal Resistance^{(Note 4,5)}

Junction to Ambient

^oC/W

R_θJA

62.5

 Limited only By Maximum Junction Temperature

February 18,2023

PJQ4442P-AU-REV.02

Page 1

12 3 4 5 6

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