PJQ4414P
30V N-Channel Enhancement Mode MOSFET
DFN3333-8L
30 V
25 A
Voltage
Current
Features
RDS(ON), VGS@10V,ID@9A<18mΩ
RDS(ON), VGS@4.5V,ID@4.5A<28mΩ
High switching speed
Improved dv/dt capability
Low gate charge
Low reverse transfer capacitance
Lead free in compliance with EU RoHS 2.0
Green molding compound as per IEC 61249 standard
Mechanical Data
Case : DFN3333-8L Package
Terminals : Solderable per MIL-STD-750, Method 2026
Approx. Weight : 0.03 grams
Maximum Ratings and Thermal Characteristics (TA=25oC unless otherwise noted)
PARAMETER
Drain-Source Voltage
SYMBOL
LIMIT
UNITS
VDS
VGS
30
+20
25
V
V
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(Note 1)
Power Dissipation
TC=25oC
TC=100oC
TC=25oC
TC=25oC
TC=100oC
TA=25oC
TA=70oC
TA=25oC
TA=70oC
ID
16
A
IDM
PD
100
21
W
A
8.4
8
Continuous Drain Current
ID
6.5
Power Dissipation
Power Dissipation
2.0
PD
W
oC
1.3
Operating Junction and Storage Temperature Range
TJ,TSTG
RθJC
-55~150
5.95
62.5
Junction to Case
Typical Thermal resistance(Note 4,5)
Junction to Ambient
oC/W
RθJA
Limited only By Maximum Junction Temperature
February 18,2023
PJQ4414P-REV.05
Page 1