Datasheet > PJQ4423DP

PJQ4423DP

更新时间： 2024-10-29 14:55:35

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
6页	771K
描述
DFN3333-8L

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中文翻译

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数据手册

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PJQ4423DP 数据手册

Prelim

PJQ4423DP

20V P-Channel Enhancement Mode MOSFET

DFN3333-8L

-20 V

-40 A

Voltage

Current

Features

 R_DS(ON), V_GS@-4.5V, I_D@-5.5A<12mΩ

 R_DS(ON), V_GS@-2.5V, I_D@-3.0A<17.5mΩ

 R_DS(ON), V_GS@-1.8V, I_D@-1.5A<26mΩ

 Low R_DS(ON)

 High Current Rating

 Lead free in compliance with EU RoHS 2.0

 Green molding compound as per IEC 61249 standard

Mechanical Data

 Case : DFN3333-8L Package

 Terminals : Solderable per MIL-STD-750, Method 2026

 Approx. Weight : 0.03 grams

Maximum Ratings and Thermal Characteristics (T_A=25^oC unless otherwise noted)

PARAMETER

Drain-Source Voltage

SYMBOL

V_DS

LIMIT

-20

UNITS

Gate-Source Voltage

V_GS

±10

-13

T_A=25^oC

T_A=70^oC

T_A=25^oC

T_A=70^oC

T_C=25^oC

T_C=100^oC

T_C=25^oC

T_C=100^oC

Continuous Drain Current^{(Note 4)}

Pulsed Drain Current^{(Note 1)}

Power Dissipation

I_D

-10

I_DM

-65

2.8

1.8

-40

Continuous Drain Current^{(Note 4)}

Power Dissipation

I_D

-25

Single Pulse Avalanche Energy^{(Note 6)}

Operating Junction and Storage Temperature Range

Junction to Case

E_AS

T_J,T_STG

R_θJC

^oC

-55~150

4.5

Typical Thermal Resistance^{(Note 5)}

Junction to Ambient

^oC/W

R_θJA

February 18,2023

PJQ4423DP-REV.02

Page 1

12 3 4 5 6

中文翻译

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