Datasheet > PJQ2460

PJQ2460

更新时间： 2022-02-26 14:37:12

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
6页	313K
描述
60V N-Channel Enhancement Mode MOSFET

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PJQ2460 数据手册

PPJQ2460

60V N-Channel Enhancement Mode MOSFET

DFN2020B-6L

60 V

3.2A

Voltage

Current

Features

 RDS(ON) , VGS@10V, ID@3.2A<75mΩ

 RDS(ON) , VGS@4.5V, ID@2.0A<90mΩ

 Advanced Trench Process Technology

 High density cell design for ultra low on-resistance

 Lead free in comply with EU RoHS 2011/65/EU directives.

 Green molding compound as per IEC61249 Std.

(Halogen Free)

Mechanical Data

 Case: DFN2020B-6L Package

 Terminals: Solderable per MIL-STD-750, Method 2026

 Marking: 460

Maximum Ratings and Thermal Characteristics (T_A=25^oC unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNITS

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

I_D

+20

Continuous Drain Current

Pulsed Drain Current

3.2

I_DM

12.8

2.0

T_a=25^oC

Derate above 25^oC

Power Dissipation

P_D

mW/ ^oC

^oC

Operating Junction and Storage Temperature Range

Typical Thermal Resistance

T_J,T_STG

-55~150

Junction to Ambient, t<10s ^{(Note 3)}

^oC/W

R_θJA

62.5

November 16,2015-REV.02

Page 1

12 3 4 5 6

中文翻译

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