Datasheet > PJQ2800

PJQ2800

更新时间： 2022-02-26 14:37:12

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
6页	309K
描述
20V N-Channel Enhancement Mode MOSFET

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PJQ2800 数据手册

PPJQ2800

20V N-Channel Enhancement Mode MOSFET

DFN2020-6L

20 V

5.2A

Voltage

Current

Features

 RDS(ON) , VGS@4.5V, ID@5.2A<32mΩ

 RDS(ON) , VGS@2.5V, ID@3.2A<45mΩ

 RDS(ON) , VGS@1.8V, ID@2.0A<65mΩ

 Advanced Trench Process Technology

 High density cell design for ultra low on-resistance

 ESD Protected

 Lead free in compliance with EU RoHS 2011/65/EU directive.

 Green molding compound as per IEC61249 Std.

(Halogen Free)

Mechanical Data

 Case: DFN2020-6L Package

 Terminals : Solderable per MIL-STD-750, Method 2026

 Approx. Weight: 0.00032 ounces, 0.0093 grams

 Marking: 800

Maximum Ratings and Thermal Characteristics (T_A=25^oC unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNITS

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

I_D

Continuous Drain Current

Pulsed Drain Current

5.2

I_DM

20.8

1.45

11.6

-55~150

T_a=25^oC

Derate above 25^oC

Power Dissipation

P_D

mW/ ^oC

^oC

Operating Junction and Storage Temperature Range

Typical Thermal resistance

T_J,T_STG

Junction to Ambient ^{(Note 3)}

^oC/W

R_θJA

November 16,2015-REV.01

Page 1

12 3 4 5 6

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