Datasheet > PJQ2815

PJQ2815

更新时间： 2022-02-26 14:37:12

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
6页	305K
描述
20V P-Channel Enhancement Mode MOSFET

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PJQ2815 数据手册

PPJQ2815

20V P-Channel Enhancement Mode MOSFET

DFN2020-6L

-20 V

-4.2A

Voltage

Current

Features

 RDS(ON) , VGS@-4.5V, ID@-4.2A<52mΩ

 RDS(ON) , VGS@-2.5V, ID@-3.3A<62mΩ

 RDS(ON) , VGS@-1.8V, ID@-2.2A<73mΩ

 Advanced Trench Process Technology

 Specially Designed for Switch Load, PWM Application, etc

 ESD Protected

 Lead free in compliance with EU RoHS 2011/65/EU directive

 Green molding compound as per IEC61249 Std.

(Halogen Free)

Mechanical Data

 Case: DFN2020-6L Package

 Terminals: Solderable per MIL-STD-750, Method 2026

 Approx. Weight: 0.00032 ounces, 0.0093 grams

 Marking: 815

Maximum Ratings and Thermal Characteristics (T_A=25^oC unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNITS

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

I_D

-20

Continuous Drain Current

Pulsed Drain Current

-4.2

I_DM

-16.8

1.5

T_a=25^oC

Derate above 25^oC

Power Dissipation

P_D

mW/ ^oC

^oC

Operating Junction and Storage Temperature Range

Typical Thermal resistance

T_J,T_STG

-55~150

Junction to Ambient ^{(Note 3)}

^oC/W

R_θJA

83.3

November 16,2015-REV.01

Page 1

12 3 4 5 6

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