Datasheet > PJQ2470A

PJQ2470A

更新时间： 2023-12-06 20:11:03

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
6页	481K
描述
DFN2020B-6L

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数据手册

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PJQ2470A 数据手册

PJQ2470A

100V N-Channel Enhancement Mode MOSFET

DFN2020B-6L

100 V

1.7A

Voltage

Current

Features

 R_DS(ON), V_GS@10V, I_D@1.7A<310mΩ

 R_DS(ON), V_GS@4.5V, I_D@1.0A<320mΩ

 Advanced Trench Process Technology

 High density cell design for ultra low on-resistance

 Low input capacitance

 Lead free in compliance with EU RoHS 2.0

 Green molding compound as per IEC 61249 standard

Mechanical Data

 Case : DFN2020B-6L Package

 Terminals : Solderable per MIL-STD-750, Method 2026

 Approx. Weight : 0.0003 ounces, 0.0086 grams

Maximum Ratings and Thermal Characteristics (T_A=25^oC unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

100

UNITS

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

I_D

+20

Continuous Drain Current ^{(Note 4)}

Pulsed Drain Current ^{(Note 1)}

1.7

I_DM

6.8

T_a=25^oC

2.0

Power Dissipation

P_D

Derate above 25^oC

mW/ ^oC

^oC

Operating Junction and Storage Temperature Range

Typical Thermal Resistance

T_J,T_STG

R_θJA

-55~150

62.5

^oC/W

Junction to Ambient ^{(Note 5)}

June 17,2021

PJQ2470A-REV.01

Page 1

12 3 4 5 6

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