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PHP3N40E PDF预览

PHP3N40E

更新时间: 2024-09-27 22:14:31
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页数 文件大小 规格书
10页 97K
描述
PowerMOS transistors Avalanche energy rated

PHP3N40E 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:TO-220AB, 3 PIN
针数:3Reach Compliance Code:unknown
风险等级:5.84Is Samacsys:N
其他特性:FAST SWITCHING雪崩能效等级(Eas):120 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:400 V最大漏极电流 (Abs) (ID):2.5 A
最大漏极电流 (ID):2.5 A最大漏源导通电阻:3.5 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):50 W
最大脉冲漏极电流 (IDM):10 A认证状态:Not Qualified
子类别:FET General Purpose Powers表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

PHP3N40E 数据手册

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Philips Semiconductors  
Product specification  
PowerMOS transistors  
Avalanche energy rated  
PHP3N40E, PHB3N40E, PHD3N40E  
FEATURES  
SYMBOL  
QUICK REFERENCE DATA  
d
• Repetitive Avalanche Rated  
• Fast switching  
VDSS = 400 V  
ID = 2.5 A  
• Stable off-state characteristics  
• High thermal cycling performance  
• Low thermal resistance  
g
RDS(ON) 3.5 Ω  
s
GENERAL DESCRIPTION  
N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies,  
T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching  
applications.  
The PHP3N40E is supplied in the SOT78 (TO220AB) conventional leaded package.  
The PHB3N40E is supplied in the SOT404 surface mounting package.  
The PHD3N40E is supplied in the SOT428 surface mounting package.  
PINNING  
SOT78 (TO220AB)  
SOT404  
SOT428  
PIN  
1
DESCRIPTION  
tab  
tab  
tab  
gate  
2
drain1  
source  
3
2
2
tab drain  
1 2 3  
1
3
1
3
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VDSS  
VDGR  
VGS  
ID  
Drain-source voltage  
Tj = 25 ˚C to 150˚C  
-
400  
400  
± 30  
2.5  
1.5  
10  
V
V
Drain-gate voltage  
Tj = 25 ˚C to 150˚C; RGS = 20 kΩ  
-
Gate-source voltage  
Continuous drain current  
-
V
Tmb = 25 ˚C; VGS = 10 V  
Tmb = 100 ˚C; VGS = 10 V  
Tmb = 25 ˚C  
-
A
-
A
IDM  
PD  
Tj, Tstg  
Pulsed drain current  
Total dissipation  
Operating junction and  
storage temperature range  
-
-
A
Tmb = 25 ˚C  
50  
W
˚C  
- 55  
150  
1 It is not possible to make connection to pin 2 of the SOT428 or SOT404 packages.  
August 1998  
1
Rev 1.100  

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