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PHP3N20L PDF预览

PHP3N20L

更新时间: 2024-09-27 22:44:27
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管
页数 文件大小 规格书
7页 55K
描述
PowerMOS transistor Logic level FET

PHP3N20L 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.84其他特性:LOGIC LEVEL COMPATIBLE, FAST SWITCHING
雪崩能效等级(Eas):25 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:200 V
最大漏极电流 (Abs) (ID):3.5 A最大漏极电流 (ID):3.5 A
最大漏源导通电阻:1.5 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
功耗环境最大值:50 W最大功率耗散 (Abs):50 W
最大脉冲漏极电流 (IDM):14 A认证状态:Not Qualified
子类别:FET General Purpose Powers表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

PHP3N20L 数据手册

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Philips Semiconductors  
Product specification  
PowerMOS transistor  
Logic level FET  
PHP3N20L  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
N-channel enhancement mode logic  
level field-effect power transistor in a  
plastic envelope featuring high  
avalanche energy capability, stable  
blocking voltage, fast switching and  
high thermal cycling performance  
withlowthermalresistance. Intended  
for use in Switched Mode Power  
Supplies (SMPS), motor control  
circuits and general purpose  
switching applications.  
SYMBOL  
PARAMETER  
MAX.  
UNIT  
VDS  
ID  
Drain-source voltage  
Drain current (DC)  
Total power dissipation  
Drain-source on-state resistance  
200  
3.5  
50  
V
A
W
Ptot  
RDS(ON)  
1.5  
PINNING - TO220AB  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
d
tab  
gate  
2
drain  
g
3
source  
tab drain  
1 2 3  
s
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
ID  
Continuous drain current  
Tmb = 25 ˚C; VGS = 10 V  
Tmb = 100 ˚C; VGS = 10 V  
Tmb = 25 ˚C  
-
-
-
-
-
-
-
3.5  
2.5  
A
A
IDM  
PD  
Pulsed drain current  
Total dissipation  
14  
A
Tmb = 25 ˚C  
50  
W
W/K  
V
PD/Tmb Linear derating factor  
Tmb > 25 ˚C  
0.33  
± 15  
± 20  
VGS  
VGSM  
Gate-source voltage  
Non-repetitive gate-source  
voltage  
Single pulse avalanche  
energy  
Peak avalanche current  
tp 50 µs  
V
EAS  
V
DD 50 V; starting Tj = 25˚C; RGS = 50 ;  
VGS = 5 V  
DD 50 V; starting Tj = 25˚C; RGS = 50 ;  
VGS = 5 V  
-
-
25  
3.5  
175  
mJ  
A
IAS  
V
Tj, Tstg  
Operating junction and  
storage temperature range  
- 55  
˚C  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
TYP.  
MAX.  
UNIT  
Rth j-mb  
Rth j-a  
Thermal resistance junction to  
-
3
-
K/W  
mounting base  
Thermal resistance junction to  
ambient  
60  
K/W  
September 1997  
1
Rev 1.000  

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