Datasheet > PESDHC5D7VU

PESDHC5D7VU

更新时间： 2024-11-19 17:15:31

品牌	Logo	应用领域
友台半导体 - UMW		脉冲
页数	文件大小	规格书
4页	376K
描述
反向截止电压（Vrwm）:8V;极性/通道数（Channel）:1-Line，Unidirectional;击穿电压（VBR):8V;峰值脉冲电流(Ipp):1A;最大钳位电压(Vc):8.8V;电容（Cj）:150pF

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PESDHC5D7VU 数据手册

UMW

PESDHC5D7VU

Description

The PESDHC5D7VU protects sensitive semiconductor

components from damage or upset due to electrostatic

discharge (ESD) and other voltage induced transient

events. They feature large cross-sectional area

junctions for conducting high transient currents,

offer desirable electrical characteristics for board

level protection, such as fast response time, low

operating voltage.

Pin1

Pin2

Circuit Diagram

Feature

Mechanical Characteristics

●

400W peak pulse power per line (t

_P= 8/20μs)

●

Mounting position: Any

●

Replacement for MLV(0603)

Unidirectional configurations

Response time is typically < 1 ns

Protect one I/O or power line

Low clamping voltage

℃

Qualified max reflow temperature:260

●

Pure tin plating: 7 ~ 17 um

Pin flatness: ≤3mil

Transient protection for data lines to IEC 61000-4-2(ESD)

±30KV(air), ±30KV(contact); IEC 61000-4-4 (EFT) 40A (5/50ns)

Applications

●

Cellular phones

Portable devices

Digital cameras

Power supplies

Electronics Parameter

Symbol

Parameter

I_F

V_RWM

I_R

Peak Reverse Working Voltage

Reverse Leakage Current @ V_RWM

Breakdown Voltage @ I_T

Test Current

V_BR

I_T

V_C

I_PP

V_C

P_PP

C_J

Maximum Reverse Peak Pulse Current

Clamping Voltage @ I_PP

Peak Pulse Power

_BRV_RWM

I_RV_F

I_T

Junction Capacitance

I_F

Forward Current

I_PP

V_F

Forward Voltage @ I_F

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4

中文翻译

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