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PESDNC9D5VB PDF预览

PESDNC9D5VB

更新时间: 2024-11-18 05:34:43
品牌 Logo 应用领域
其他 - ETC 电视
页数 文件大小 规格书
3页 186K
描述
PRISEMI的防静电TVS管产品

PESDNC9D5VB 数据手册

 浏览型号PESDNC9D5VB的Datasheet PDF文件第2页浏览型号PESDNC9D5VB的Datasheet PDF文件第3页 
PESDNC9D5VB  
ESD Protector  
Description  
The PESDNC9D5VB protects sensitive semiconductor components from damage  
or upset due to electrostatic discharge (ESD) and other voltage induced transient  
events. They feature large cross-sectional area junctions for conducting high  
transient currents, offer desirable electrical characteristics for board level  
protection, such as fast response time, low operating voltage. It gives designer  
the flexibility to protect one bi-directional line in applications where arrays are not  
practical.  
Feature  
¾
¾
¾
¾
¾
¾
¾
¾
¾
100W peak pulse power per line (tP = 8/20μs)  
SOD-923 package  
Replacement for MLV(0402)  
Bidirectional configurations  
Response Time is Typically < 1 ns  
ESD protection > 16 kV  
Low clamping voltage  
RoHS compliant  
Transient protection for data lines to IEC 61000-4-2(ESD) ±15KV(air),  
±8KV(contact); IEC 61000-4-4 (EFT) 40A (5/50ns)  
Applications  
¾
¾
¾
¾
Cellular phones  
Portable devices  
Digital cameras  
Power supplies  
Electrical characteristics per line@25( unless otherwise specified)  
Parameter  
Symbol  
VRWM  
VBR  
Conditions  
Min.  
Typ.  
6.7  
6
Max.  
5
Units  
V
Reverse Stand-off Voltage  
Reverse Breakdown Voltage  
Reverse Leakage Current  
Junction Capacitance  
It = 1mA  
5.6  
7.8  
1.0  
10  
V
IR  
VRWM = 5V T=25  
VR=0V f = 1MHz  
μA  
pF  
Cj  
Absolute maximum rating@25℃  
Rating  
Symbol  
Value  
100  
Units  
Unidirectional Peak Pulse Power  
Ppp  
TJ  
W
Operating Temperature  
Storage Temperature  
-55 to +150  
-55 to +150  
TSTG  
Rev.04  
1
www.prisemi.com  

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