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PESDXL2BT PDF预览

PESDXL2BT

更新时间: 2024-11-19 21:53:31
品牌 Logo 应用领域
恩智浦 - NXP 二极管
页数 文件大小 规格书
14页 178K
描述
Low capacitance double bidirectional ESD protection diodes in SOT23

PESDXL2BT 数据手册

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PESDxL2BT series  
Low capacitance double bidirectional ESD protection diodes  
in SOT23  
Rev. 01 — 1 November 2005  
Product data sheet  
1. Product profile  
1.1 General description  
Low capacitance double bidirectional ElectroStatic Discharge (ESD) protection diodes in a  
SOT23 small Surface Mounted Device (SMD) plastic package designed to protect two  
signal lines from the damage caused by ESD and other transients.  
1.2 Features  
ESD protection of two lines  
Ultra low leakage current: IRM < 90 nA  
ESD protection up to 23 kV  
IEC 61000-4-2, level 4 (ESD)  
IEC 61000-4-5 (surge); IPP = 15 A  
Max. peak pulse power: PPP = 350 W  
Low clamping voltage: VCL = 26 V  
Small SMD plastic package  
1.3 Applications  
Computers and peripherals  
Audio and video equipment  
Cellular handsets and accessories  
Communication systems  
Portable electronics  
Subscriber Identity Module (SIM) card  
protection  
1.4 Quick reference data  
Table 1:  
Symbol  
VRWM  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
reverse standoff voltage  
PESD3V3L2BT  
PESD5V0L2BT  
PESD12VL2BT  
PESD15VL2BT  
PESD24VL2BT  
diode capacitance  
-
-
-
-
-
-
-
-
-
-
3.3  
5.0  
12  
15  
24  
V
V
V
V
V
Cd  
VR = 0 V;  
f = 1 MHz  
PESD3V3L2BT  
PESD5V0L2BT  
PESD12VL2BT  
PESD15VL2BT  
PESD24VL2BT  
-
-
-
-
-
101  
75  
19  
16  
11  
-
-
-
-
-
pF  
pF  
pF  
pF  
pF  

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