Datasheet > PESDXS2UQ_10

PESDXS2UQ_10

更新时间： 2024-09-15 06:00:15

品牌	Logo	应用领域
恩智浦 - NXP		二极管
页数	文件大小	规格书
13页	164K
描述
Double ESD protection diodes in SOT663 package

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中文翻译

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数据手册

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PESDXS2UQ_10 数据手册

PESDxS2UQ series

Double ESD protection diodes in SOT663 package

Rev. 04 — 26 January 2010

Product data sheet

1. Product profile

1.1 General description

Unidirectional double ElectroStatic Discharge (ESD) protection diodes in a SOT663 ultra

small and flat lead Surface-Mounted Device (SMD) plastic package designed to protect

up to two signal lines from the damage caused by ESD and other transients.

1.2 Features

Unidirectional ESD protection of up to

ESD protection up to 30 kV

IEC 61000-4-2; level 4 (ESD)

two lines

Max. peak pulse power: P_PP= 150 W

at t_p= 8/20 μs

Low clamping voltage: V_CL= 20 V

IEC 61000-4-5 (surge); I_PP= 15 A

at t_p= 8/20 μs

at I_PP= 15 A

Low reverse leakage current: I_RM< 1 nA

1.3 Applications

Computers and peripherals

Audio and video equipment

Communication systems

High-speed data lines

Parallel ports

1.4 Quick reference data

Table 1.

Symbol Parameter

V_RWMreverse standoff voltage

Quick reference data

Conditions

Min

Typ

Max

Unit

PESD3V3S2UQ

PESD5V0S2UQ

PESD12VS2UQ

PESD15VS2UQ

PESD24VS2UQ

diode capacitance

PESD3V3S2UQ

PESD5V0S2UQ

PESD12VS2UQ

PESD15VS2UQ

PESD24VS2UQ

3.3

C_d

f = 1 MHz; V_R= 0 V

200

150

275

215

100

12 3 4 5 6 7...13

中文翻译

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