Datasheet > PESDNC5D3V3U

PESDNC5D3V3U

更新时间： 2024-11-19 17:15:19

品牌	Logo	应用领域
友台半导体 - UMW		脉冲
页数	文件大小	规格书
4页	303K
描述
反向截止电压（Vrwm）:3.3V;极性/通道数（Channel）:1-Line，Unidirectional;击穿电压（VBR):5V;峰值脉冲电流(Ipp):1A;最大钳位电压(Vc):5.8V;电容（Cj）:120pF

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PESDNC5D3V3U 数据手册

UMW

PESDNC5D3V3U

The PESDNC5D3V3U protects sensitive semiconductor components

Description

from damage or upset due to electrostatic discharge (ESD) and other

voltage induced transient events. They feature large cross-sectional area

junctions for conducting high transient currents, offer desirable electrical

characteristics for board level protection, such as fast response time,

low operating voltage. It gives designer the flexibility to protect one

unidirectional line in applications where arrays are not practical.

Feature

Applications

●

150W peak pulse power per line (t_P= 8/20μs)

SOD-523 package

●

Cellular phones

●

Portable devices

Digital cameras

Power supplies

Replacement for MLV(0603)

Unidirectional configurations

Response time is typically < 1 ns

Protect one I/O or power line

Low clamping voltage

●

RoHS compliant

Transient protection for data lines to IEC 61000-4-2(ESD) ±30KV(air),

±30KV(contact); IEC 61000-4-4 (EFT) 40A (5/50ns)

Mechanical Characteristics

Lead finish:100% matte Sn(Tin) Mounting

position: Any

●

Qualified max reflow temperature:260℃

Device meets MSL 1 requirements

Pure tin plating: 7 ~ 17 um

Pin flatness:≤3mil

●

Electronics Parameter

Symbol

Parameter

I_F

V_RWM

I_R

Peak Reverse Working Voltage

Reverse Leakage Current @ V_RWM

Breakdown Voltage @ I_T

Test Current

V_BR

I_T

V_C

_BRV_RWM

I_PP

V_C

P_PP

C_J

Maximum Reverse Peak Pulse Current

Clamping Voltage @ I_PP

Peak Pulse Power

I_R

I_T

V_F

Junction Capacitance

I_F

Forward Current

I_PP

V_F

Forward Voltage @ I_F

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4

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