Datasheet > PESDNC3D5VB

PESDNC3D5VB

更新时间： 2024-11-19 17:15:35

品牌	Logo	应用领域
友台半导体 - UMW		脉冲
页数	文件大小	规格书
4页	416K
描述
反向截止电压（Vrwm）:5V;极性/通道数（Channel）:1-Line，Bidirectional;击穿电压（VBR):6V;峰值脉冲电流(Ipp):1A;最大钳位电压(Vc):9.2V;电容（Cj）:85pF

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PESDNC3D5VB 数据手册

UMW

PESDNC3D5VB

Description

The UMW PESDNC3D5VB protects sensitive

semiconductor components from damage or upset due

to electrostatic discharge (ESD) and other voltage

induced transient events. They feature large cross-

sectional area junctions for conducting high transient

currents, offer desirable electrical characteristics for

board level protection, such as fast response time, low

operating voltage. It gives designer the flexibility to

protect one bi-directional line in applications where

arrays are not practical.

Feature

■

350W peak pulse power per line (t =8/20μs)

SOD-323 package

Replacement for MLV(0805)

Bidirectional configurations

Protects one power or I/O port

Low clamping voltage

RoHS compliant

Applications

Mechanical Characteristics

■

Laptop computers

■

Lead finish:100%matte Sn(Tin)

Mounting position: Any

■

Cellular phones

■

Digital cameras

Qualified max reflowtemperature:260℃

Pure tin plating: 7 ~ 17 um

Pin flatness:≤3mil

■

PDAs

Electronics Parameter

Symbol

Parameter

V_RWM

I_R

Peak Reverse Working Voltage

Reverse Leakage Current @ V_RWM

Breakdown Voltage @ I_T

Test Current

I_PP

V_BR

I_T

I_R

I_PP

V_C

P_PP

C_J

Maximum Reverse Peak Pulse Current

Clamping Voltage @ I_PP

Peak Pulse Power

V_CV_BRV_RWM

I_R

I_T

_RWMV_BR

V_C

Junction Capacitance

I_F

Forward Current

I_PP

V_F

Forward Voltage @ I_F

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4

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