Datasheet > PESDNC5D12VU

PESDNC5D12VU

更新时间： 2024-11-18 05:34:43

品牌	Logo	应用领域
其他 - ETC		电视
页数	文件大小	规格书
4页	158K
描述
PRISEMI的防静电TVS管产品

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PESDNC5D12VU 数据手册

PESDNC5D12VU

ESD Protector

Description

The PESDNC5D12VU ESD protector is designed to replace multilayer varistors

(MLVs) in portable applications such as cell phones, notebook computers,

and PDAs. They feature large cross-sectional area junctions for conducting

high transient currents, offer desirable electrical characteristics for board

level protection, such as fast response time, lower operating voltage, lower

clamping voltage and no device degradation when compared to MLVs.

The PESDNC5D12VU protects sensitive semiconductor components from

damage or upset due to electrostatic discharge (ESD) and other voltage induced

transient events. It gives designer the flexibility to protect one unidirectional line in

applications where arrays are not practical.

Feature

140W peak pulse power per line (t_P= 8/20μs)

SOD-523 package: 1.6mm 0.8mm 0.6mm

Replacement for MLV(0603)

Protect one I/O or power line

Response Time is Typically < 1 ns

Stand off voltages: 12V

Low clamping voltage

RoHS compliant

Solid-state silicon-avalanche technology

Transient protection for data lines to IEC 61000-4-2(ESD) ±25KV(air),

±15KV(contact); IEC 61000-4-4 (EFT) 40A (5/50ns)

Applications

Cell Phone Handsets and Accessories

Personal Digital Assistants (PDA s)

Notebooks, Desktops, and Servers

Digital Cameras

Peripherals

MP3 Players

Electrical characteristics per line@25℃( unless otherwise specified)

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Units

Reverse Stand-off Voltage

Reverse Breakdown Voltage

Reverse Leakage Current

V_RWM

V_BR

I_R

I_t= 1mA

13.5

V_RWM=12V T=25℃

I_F=10mA

1.0

μA

Forward Voltage

Clamping Voltage

V_F

0.8

I_PP=5.9A t_P=8/20μS

V_C

23.7

V_R=0V

f = 1MHz

Junction Capacitance

C_j

Rev.04

www.prisemi.com

12 3 4

中文翻译

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