Datasheet > PESD2V0Y1BSF

PESD2V0Y1BSF

更新时间： 2024-11-02 11:13:31

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
15页	1566K
描述
Extremely low capacitance bidirectional ESD protection diodeProduction

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PESD2V0Y1BSF 数据手册

PESD2V0Y1BSF

Extremely low capacitance bidirectional ESD protection

diode

1 March 2021

Product data sheet

1. General description

Extremely low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode, part of the

TrEOS protection family. This device is housed in a DSN0603-2 (SOD962-2) leadless ultra small

Surface-Mounted Device (SMD) package designed to protect one signal line from the damage

caused by ESD and other transients.

2. Features and benefits

•

Bidirectional ESD protection of one line

•

Extremely low trigger-voltage V_t1of 4.3 V TLP

Extremely low diode capacitance C_d= 0.69 pF

Extremely low clamping voltage to protect sensitive I/Os

Extremely low-inductance protection path to ground

ESD protection up to ±20 kV according to IEC 61000-4-2

Ultra small SMD package

3. Applications

•

USB 3.2 and Universal Flash Storage (UFS) data lines

Cellular handsets and accessories

Portable electronics

Communication systems

Computers and peripherals

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_RWM

reverse standoff

voltage

C_d

diode capacitance

f = 1 MHz; V_R= 1 V; T_amb= 25 °C

0.69

0.83

12 3 4 5 6 7...15

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