Datasheet > PESD2V8R1BSF

PESD2V8R1BSF

更新时间： 2024-09-27 11:14:59

品牌	Logo	应用领域
安世 - NEXPERIA		二极管
页数	文件大小	规格书
13页	515K
描述
Ultra low capacitance bidirectional ESD protection diodeProduction

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中文翻译

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技术参数
数据手册

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PESD2V8R1BSF 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.8
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	湿度敏感等级：	1
Base Number Matches：	1

PESD2V8R1BSF 数据手册

PESD2V8R1BSF

Ultra low capacitance bidirectional ESD protection diode

1 March 2021

Product data sheet

1. General description

Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode, part of the

TrEOS Protection family. This device is housed in a DSN0603-2 (SOD962-2) leadless ultra

small Surface-Mounted Device (SMD) package. The TrEOS Protection family is optimized

for safeguarding very sensitive high-speed interfaces against ESD pulses with a high level of

robustness.

2. Features and benefits

•

Suitable for USB4 and Thunderbolt3 data lines

•

Backwards compatible to USB 3.2 due to V_RWM= 2.8 V

Extremely low insertion loss of -0.21 dB at 10 GHz

Extremely low return loss of -17.4 dB at 10 GHz

Bidirectional ESD protection of one line

Extremely low diode capacitance C_d= 0.1 pF

ESD protection up to ±10 kV according to IEC 61000-4-2

Ultra small SMD package

3. Applications

ESD and surge protection for:

•

USB4 and Thunderbolt3 data lines

very sensitive interface lines

in portable electronics, communication, consumer and computing devices.

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_RWM

reverse standoff

voltage

T_amb= 25 °C

-2.8

2.8

C_d

diode capacitance

f = 1 MHz; V_R= 0 V; T_amb= 25 °C

0.1

0.15

12 3 4 5 6 7...13

中文翻译

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