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PESD36VS1UL PDF预览

PESD36VS1UL

更新时间: 2024-11-19 11:12:55
品牌 Logo 应用领域
安世 - NEXPERIA 局域网二极管
页数 文件大小 规格书
11页 748K
描述
Unidirectional ESD protection diodeProduction

PESD36VS1UL 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PBCC-N2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.74最大击穿电压:39.8 V
最小击穿电压:38.2 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码:R-PBCC-N2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值反向功率耗散:150 W
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:CHIP CARRIER峰值回流温度(摄氏度):260
极性:UNIDIRECTIONAL最大重复峰值反向电压:36 V
表面贴装:YES技术:AVALANCHE
端子面层:Tin (Sn)端子形式:NO LEAD
端子位置:BOTTOM处于峰值回流温度下的最长时间:30
Base Number Matches:1

PESD36VS1UL 数据手册

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PESD36VS1UL  
Unidirectional ESD protection diode  
17 October 2016  
Product data sheet  
1. General description  
Unidirectional ElectroStatic Discharge (ESD) protection diode in a leadless ultra small SOD882  
Surface-Mounted Device (SMD) plastic package designed to protect one signal line from the  
damage caused by ESD and other transients.  
2. Features and benefits  
ESD protection of one line  
Ultra small SMD plastic package  
AEC-Q101 qualified  
ESD protection up to 30 kV  
IEC 61000-4-5; (surge); IPPM = 2.5 A  
Rated peak pulse power: PPPM = 150 W  
Ultra low leakage current: IRM < 1 nA  
3. Applications  
Computers and peripherals  
Audio and video equipment  
Cellular handsets and accessories  
Portable electronics  
Communication systems  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VRWM  
reverse standoff  
voltage  
Tamb = 25 °C  
-
-
36  
V
Cd  
diode capacitance  
f = 1 MHz; VR = 0 V; Tamb = 25 °C  
-
18  
30  
pF  
 
 
 
 

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