Datasheet > PESD30VF1BL

PESD30VF1BL

更新时间： 2024-11-21 11:14:07

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安世 - NEXPERIA		/
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描述
Bidirectional ESD protection diodeProduction

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PESD30VF1BL 数据手册

PESD30VF1BL

Bidirectional ESD protection diode

8 April 2019

Product data sheet

1. General description

Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in a DFN1006-2

(SOD882) leadless ultra small Surface-Mounted Device (SMD) plastic package designed to protect

one signal line from the damage caused by ESD and other transients.

2. Features and benefits

•

Bidirectional ESD protection of one line

•

High reverse standoff voltage V_RWM= 30 V

Ultra-low diode capacitance C_d= 0.27 pF

Ultra small plastic package 1.0 x 0.6 x 0.48 mm

ESD protection up to 12 kV; IEC 61000-4-2

AEC-Q101 qualified

3. Applications

•

NFC antenna protection

Protection of high-speed data lines

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_RWM

reverse standoff

voltage

T_amb= 25 °C

I_PPM

V_CL

rated peak pulse

current

t_p= 8/20 µs

[1]

clamping voltage

I_PPM= 1 A; T_amb= 25 °C

6.5

[1] Device stressed with 8/20 μs exponential decay waveform according to IEC 61000-4-5.

5. Pinning information

Table 2. Pinning information

Symbol Description

Simplified outline

Graphic symbol

cathode (diode 1)

cathode (diode 2)

sym045

Transparent

top view

DFN1006-2 (SOD882)

12 3 4 5 6 7...10

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