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PESD36VS1UJ PDF预览

PESD36VS1UJ

更新时间: 2024-11-18 21:04:11
品牌 Logo 应用领域
恩智浦 - NXP 局域网光电二极管电视
页数 文件大小 规格书
11页 194K
描述
TVS DIODE

PESD36VS1UJ 技术参数

生命周期:Transferred包装说明:R-PDSO-F2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.78
其他特性:IEC-61643-321最大击穿电压:39.8 V
最小击穿电压:38.2 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码:R-PDSO-F2最大非重复峰值反向功率耗散:150 W
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性:UNIDIRECTIONAL
参考标准:AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5最大重复峰值反向电压:36 V
表面贴装:YES技术:AVALANCHE
端子形式:FLAT端子位置:DUAL
Base Number Matches:1

PESD36VS1UJ 数据手册

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PESD36VS1UJ  
Unidirectional ESD protection diode  
S
16 September 2015  
Product data sheet  
1. General description  
Unidirectional ElectroStatic Discharge (ESD) protection diode in a flat lead very small  
SOD323F Surface-Mounted Device (SMD) plastic package designed to protect one  
signal line from the damage caused by ESD and other transients.  
2. Features and benefits  
ESD protection of one line  
ESD protection up to 30 kV  
IEC 61000-4-5; (surge); IPPM = 2.5 A  
Rated peak pulse power: PPPM = 150 W  
Ultra low leakage current: IRM < 1 nA  
AEC-Q101 qualified  
3. Applications  
computers and peripherals  
audio and video equipment  
cellular handsets and accessories  
portable electronics  
communication systems  
4. Quick reference data  
Table 1.  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VRWM  
reverse standoff  
voltage  
Tamb = 25 °C  
-
-
36  
V
Cd  
diode capacitance  
f = 1 MHz; VR = 0 V; Tamb = 25 °C  
-
18  
30  
pF  
Scan or click this QR code to view the latest information for this product  
 
 
 
 

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