Datasheet > PESD30VF1BALS-Q

PESD30VF1BALS-Q

更新时间： 2024-09-27 17:01:11

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
11页	231K
描述
Ultra-low capacitance bidirectional ESD protection diodeProduction

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PESD30VF1BALS-Q 数据手册

PESD30VF1BALS-Q

Ultra-low capacitance bidirectional ESD protection diode

18 January 2024

Product data sheet

1. General description

Ultra-low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in a

DFN1006BD-2 (SOD882BD) leadless ultra small Surface-Mounted Device (SMD) plastic package,

designed to protect one signal line from the damage caused by ESD and other transients.

2. Features and benefits

•

Ultra low diode capacitance C_d= 0.34 pF

•

High reverse standoff voltage V_RWM= 30 V

Very small voltage dependency of the capacitance

ESD protection up to ±15 kV according to IEC 61000-4-2, level 4

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

NFC and antenna protection

Protection of high-speed data lines

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_RWM

reverse standoff

voltage

T_amb= 25 °C

C_d

diode capacitance

f = 1 MHz; V_R= 0 V; T_amb= 25 °C

0.34

0.43

12 3 4 5 6 7...11

中文翻译

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