Datasheet > PESD2V8Y1BSF

PESD2V8Y1BSF

更新时间： 2024-11-02 11:13:11

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
8页	153K
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PESD2V8Y1BSF 数据手册

PESD2V8Y1BSF

Extremely low clamping bidirectional ESD protection diode

24 January 2022

Short data sheet

1. General description

Extremely low clamping, extremely low capacitance bidirectional ElectroStatic Discharge (ESD)

protection diode, part of the TrEOS protection family. This device is housed in a DSN0603-2

(SOD962-2) leadless, ultra-small Surface-Mounted Device (SMD) package designed to protect one

signal line from the damage caused by ESD and other transients.

2. Features and benefits

•

Bidirectional ESD protection of one line

•

ESD protection up to ±14 kV contact discharge according to IEC 61000-4-2

Backwards compatible to USB3.2 due to V_RWM= 2.8 V

Extremely low diode capacitance: C_d= 0.16 pF at 1 MHz

Extremely low clamping and trigger voltage (V_t1= 6.9 V TLP) to protect sensitive transceivers

Extremely low insertion loss: -0.29 dB at 10 GHz

Extremely low return loss: -20.6 dB at 10 GHz

RF performance does not degrade over the operation voltage range

Extremely low leakage current: < 1 nA at 2.8 V

Extremely low inductance protection path to ground

Very high surge robustness: 5.5 A for a 8/20 µs pulse

IEC 61000-4-4 robust up to level 3 on I/O ports (corresponds to 40 A into a 50 Ohm

termination)

•

Ultra-small SMD package

3. Applications

•

Cellular handsets and accessories

Portable electronics

Communication systems

Computers and peripherals

USB4, USB3.2 and Thunderbolt 3 and 4 data lines

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_RWM

reverse standoff

voltage

-2.8

2.8

C_d

diode capacitance

f = 1 MHz; V_R= 0 V; T_amb= 25 °C

0.16

12 3 4 5 6 7 8

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