PRELIMINARY
PDM4M4110
AC Electrical Characteristics (Vcc = 5V ± 10%, T = 0°C to +70°C)
A
PDM4M4110SXXZ, PDM4M4110SXXM
-15 ns -20 ns -25 ns -35 ns
Min. Max. Min. Max. Min. Max. Min. Max.
Symbol
Parameter
Unit
Read Cycle
t
t
t
t
t
t
t
t
t
t
t
Read Cycle Time
15
—
—
5
—
15
15
—
6
20
—
—
3
—
20
20
—
10
—
12
8
25
—
—
3
—
25
25
—
12
—
14
10
—
—
25
35
—
—
3
—
35
35
—
15
—
16
12
—
—
35
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
RC
Address Access Time
AA
Chip Select Access Time
ACS
(1)
Chip Select to Output inLow-Z
Output Enable to Output Valid
Output Enable to Output in Low-Z
Chip Deselect to Output in High-Z
Output Disable to Output in High-Z
Output Hold from Address Change
Chip Select to Power-Up Time
Chip Deselect to Power-Down Time
CLZ
—
0
—
0
—
0
—
0
OE
(1)
(1)
—
10
6
OLZ
—
—
3
—
—
3
—
—
3
—
—
3
CHZ
OHZ
OH
(1)
—
—
15
—
—
20
(1)
0
0
0
0
PU
PD
(1)
—
—
—
—
Write Cycle
t
t
t
t
t
t
t
t
t
t
Write Cycle Time
15
13
13
3
—
—
—
—
—
—
8
20
18
18
3
—
—
—
–
25
20
20
3
—
—
—
—
—
—
13
—
—
—
35
25
25
3
—
—
—
—
—
—
15
—
—
—
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
WC
CW
AW
Chip Select to End of Write
Address Valid to End of Write
Address Setup Time
(2)
AS
Write Pulse Width
13
0
15
0
—
—
8
17
0
22
0
WP
WR
(2)
(1)
Write Recovery Time
Write Enable to Output in High-Z
Data to Write Time Overlap
Data Hold from Write Time
Output Active from End of Write
—
10
0
—
12
0
—
15
0
—
20
0
WHZ
—
—
—
—
—
—
DW
(2)
DH
(1)
2
2
2
2
OW
NOTE 1. This parameter is determined by device characteristics but is not production tested.
2. t = 0 ns for CS controlled write cycles. t , t = 3 ns for CS controlled write cycles
AS
DH WR
8-70
Rev 2.3 - 1/15/96