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PD5P8BA PDF预览

PD5P8BA

更新时间: 2024-11-19 17:15:19
品牌 Logo 应用领域
尼克森微 - NIKOSEM /
页数 文件大小 规格书
4页 267K
描述
TO-252

PD5P8BA 数据手册

 浏览型号PD5P8BA的Datasheet PDF文件第2页浏览型号PD5P8BA的Datasheet PDF文件第3页浏览型号PD5P8BA的Datasheet PDF文件第4页 
N-Channel Enhancement Mode  
Field Effect Transistor  
PD5P8BA  
NIKO-SEM  
TO-252  
Halogen-Free & Lead-Free  
PRODUCT SUMMARY  
V(BR)DSS  
20V  
RDS(ON)  
ID  
D
12mΩ  
34A  
G
S
Features  
• Pb−Free, Halogen Free and RoHS compliant.  
• Low RDS(on) to Minimize Conduction Losses.  
• Ohmic Region Good RDS(on) Ratio.  
• Optimized Gate Charge to Minimize Switching Losses.  
Applications  
Protection Circuits Applications.  
Logic/Load Switch Circuits Applications.  
1. GATE  
2. DRAIN  
3. SOURCE  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)  
PARAMETERS/TEST CONDITIONS  
Drain-Source Voltage  
SYMBOL  
VDS  
LIMITS  
20  
UNITS  
V
V
Gate-Source Voltage  
VGS  
±12  
34  
TC = 25 °C  
Continuous Drain Current  
ID  
TC = 100 °C  
21  
A
Pulsed Drain Current1  
Avalanche Current  
Avalanche Energy  
IDM  
IAS  
70  
17.8  
15.8  
25  
L = 0.1mH  
TC = 25 °C  
TC = 100 °C  
EAS  
mJ  
W
PD  
Power Dissipation  
10  
Junction & Storage Temperature Range  
TJ, Tstg  
-55 to 150  
°C  
THERMAL RESISTANCE RATINGS  
THERMAL RESISTANCE  
SYMBOL  
RJC  
TYPICAL  
MAXIMUM  
UNITS  
°C / W  
Junction-to-Case  
5
Junction-to-Ambient  
62.5  
RJA  
1Pulse width limited by maximum junction temperature.  
H-44-2  
REV1.0  
1

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