Datasheet > PD601CX

PD601CX

更新时间： 2024-11-21 17:15:31

品牌	Logo	应用领域
尼克森微 - NIKOSEM		/
页数	文件大小	规格书
7页	450K
描述
TO-252-5

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中文翻译

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数据手册

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PD601CX 数据手册

N- & P-Channel Enhancement Mode Field

Effect Transistor

PD601CX

NIKO-SEM

TO-252-5

Halogen-Free & Lead-Free

PRODUCT SUMMARY

V_(BR)DSS

R_DS(ON)

28mΩ

22mΩ

I_D

-30V

30V

-25A

23A

Features

• Pb−Free, Halogen Free and RoHS compliant.

• Low R_DS(on)to Minimize Conduction Losses.

• Ohmic Region Good R_DS(on)Ratio.

• Optimized Gate Charge to Minimize Switching Losses.

G. GATE

D. DRAIN

S. SOURCE

Applications

• Protection Circuits Applications.

• Logic/Load Switch Circuits Applications.

• DC Motor for BLDC Applications.

100% UIS Tested

100% Rg Tested

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS SYMBOL

Drain-Source Voltage

-30

±20

-25

-16

-65

-20

UNITS

V_DS

V_GS

Gate-Source Voltage

±20

T_C= 25 °C

Continuous Drain Current²

I_D

T_C= 100 °C

Pulsed Drain Current¹

Avalanche Current

Avalanche Energy

I_DM

I_AS

L = 0.1mH

T_C= 25 °C

T_C= 100 °C

E_AS

8.4

Power Dissipation

P_D

12.8

9.6

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

°C

H-28-4

REV1.0

12 3 4 5 6 7

中文翻译

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