Datasheet > PD60015

PD60015

更新时间： 2024-11-29 23:26:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管射频光电二极管放大器
页数	文件大小	规格书
5页	70K
描述
RF POWER TRANSISTORS THE LDMOST PLASTIC FAMILY

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PD60015 数据手册

PD60015

PD60015S

RF POWER TRANSISTORS

The LdmoST Plastic FAMILY

TARGET DATA

Designed for GSM / EDGE / IS-97 applications

• EXCELLENT THERMAL STABILITY

• COMMON SOURCE CONFIGURATION

• P

= 15 W with 10 dB gain @ 2000 MHz

OUT

PowerSO-10RF

(formed lead)

DESCRIPTION

The PD60015 is a common source N-Channel, en-

hancement-mode lateral Field-Effect RF power

transistor. It is designed for high gain, broad band

commercial and industrial applications. It operates

at 26 V in common source mode at frequencies of

up to 2 GHz. PD60015 boasts the excellent gain, lin-

earity and reliability of ST’s latest LDMOS technolo-

gy mounted in the first true SMD plastic RF power

package, PowerSO-10RF. PD60015’s superior lin-

earity performance makes it an ideal solution for

base station applications.

ORDER CODE

BRANDING

PD60015

The PowerSO-10 plastic package, designed to offer

high reliability, is the first ST JEDEC approved, high

power SMD package. It has been specially opti-

mized for RF needs and offers excellent RF perfor-

mances and ease of assembly.

PowerSO-10RF

(straight lead)

ORDER CODE

BRANDING

PD60015S

Mounting recommendations are available in

www.st.com/rf/ (look for application note AN1294)

ABSOLUTE MAXIMUM RATINGS (T

= 25 ^°C)

CASE

Symbol

Parameter

Value

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current

(BR)DSS

± 20

TBD

°C

DISS

Power Dissipation (@ Tc = 70 C)

Max. Operating Junction Temperature

Storage Temperature

165

-65 to +175

STG

THERMAL DATA (T

= 70 ^°C)

CASE

th(j-c)

Junction -Case Thermal Resistance

TBD

°C/W

November, 20 2001

1/5

12 3 4 5

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