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PCF85102C-2P/03,11 PDF预览

PCF85102C-2P/03,11

更新时间: 2024-11-23 19:19:47
品牌 Logo 应用领域
恩智浦 - NXP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟PC双倍数据速率光电二极管内存集成电路
页数 文件大小 规格书
20页 109K
描述
PCF85102C-2 - 256 x 8-bit CMOS EEPROM with I2C-bus interface DIP 8-Pin

PCF85102C-2P/03,11 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:DIP包装说明:DIP, DIP8,.3
针数:8Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.8最大时钟频率 (fCLK):0.1 MHz
数据保留时间-最小值:10耐久性:1000000 Write/Erase Cycles
I2C控制字节:1010DDDRJESD-30 代码:R-PDIP-T8
JESD-609代码:e4长度:9.5 mm
内存密度:2048 bit内存集成电路类型:EEPROM
内存宽度:8功能数量:1
端子数量:8字数:256 words
字数代码:256工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:256X8封装主体材料:PLASTIC/EPOXY
封装代码:DIP封装等效代码:DIP8,.3
封装形状:RECTANGULAR封装形式:IN-LINE
并行/串行:SERIAL峰值回流温度(摄氏度):NOT SPECIFIED
电源:3/5 V认证状态:Not Qualified
座面最大高度:4.2 mm串行总线类型:I2C
最大待机电流:0.0000035 A子类别:EEPROMs
最大压摆率:0.002 mA最大供电电压 (Vsup):6 V
最小供电电压 (Vsup):2.5 V标称供电电压 (Vsup):3.3 V
表面贴装:NO技术:CMOS
温度等级:INDUSTRIAL端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:7.62 mm最长写入周期时间 (tWC):10 ms
Base Number Matches:1

PCF85102C-2P/03,11 数据手册

 浏览型号PCF85102C-2P/03,11的Datasheet PDF文件第2页浏览型号PCF85102C-2P/03,11的Datasheet PDF文件第3页浏览型号PCF85102C-2P/03,11的Datasheet PDF文件第4页浏览型号PCF85102C-2P/03,11的Datasheet PDF文件第5页浏览型号PCF85102C-2P/03,11的Datasheet PDF文件第6页浏览型号PCF85102C-2P/03,11的Datasheet PDF文件第7页 
PCF85102C-2  
256 × 8-bit CMOS EEPROM with I2C-bus interface  
Rev. 04 — 22 October 2004  
Product data  
1. Description  
The PCF85102C-2 is a floating gate Electrically Erasable Programmable Read Only  
Memory (EEPROM) with 2 kbits (256 × 8-bit) non-volatile storage. By using an  
internal redundant storage code, it is fault tolerant to single bit errors. This feature  
dramatically increases the reliability compared to conventional EEPROMs. Power  
consumption is low due to the full CMOS technology used. The programming voltage  
is generated on-chip, using a voltage multiplier.  
Data bytes are received and transmitted via the serial I2C-bus. Up to eight  
PCF85102C-2 devices may be connected to the I2C-bus. Chip select is accomplished  
by three address inputs (A0, A1 and A2).  
2. Features  
Low power CMOS:  
2.0 mA maximum operating current  
maximum standby current 10 µA (at 6.0 V), typical 4 µA  
Non-volatile storage of 2 kbits organized as 256 × 8-bit  
Single supply with full operation down to 2.5 V  
On-chip voltage multiplier  
Serial input/output I2C-bus  
Write operations:  
byte write mode  
8-byte page write mode (minimizes total write time per byte)  
Read operations:  
sequential read  
random read  
Internal timer for writing (no external components)  
Internal power-on reset  
0 kHz to 100 kHz clock frequency  
High reliability by using a redundant storage code  
Endurance: 1,000,000 Erase/Write (E/W) cycles at Tamb = 22 °C  
10 years non-volatile data retention time  
Pin and address compatible to: PCF8570, PCF8571, PCF8572, PCA8581,  
PCF8582  
Pin compatible (with a different address) to PCF85103  
ESD protection exceeds 2000 V HBM per JESD22-A114, 150 V MM per  
JESD22-A115, and 1000 V CDM per JESD22-C101  
 
 

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